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Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed logic applications, but the technology was modified to meet the performance needs of RF switches. The RF SOI technologies have been improved to follow the...
IBM first qualified a 0.35μm generation 1000 Ω-cm high resistivity substrate (HiRES) SiGe BiCMOS technology in 2011. This technology was optimized for WiFi and cellular NPN power amplifier (PA), NPN low noise amplifier (LNA), and isolated CMOS NFET switch rf front-end-IC (FEIC) integration. It includes an optional through silicon via used as a low inductance ground path for NPN emitters. Data for...
We present for the first time a novel high resistivity bulk SiGe BiCMOS technology that has been optimized for a WiFi RF front-end-IC (FEIC) integration. A nominally 1000 Ohm-cm p-type silicon substrate is utilized to integrate several SiGe HBTs for power amplifiers (PAs), a SiGe HBT low-noise amplifier (LNA), and isolated nFET RF switch device. Process elements include trench isolation for low-loss...
In this study, we define and investigate the maximum power handling capability (Pmax) in an SOI RF shunt branch switch. One of the critical factor in the Pmax is the non-uniform voltage division across an OFF shunt branch. In this study we provide a simple analytical method to determine the stack voltage imbalance. The Pmax is characterized as a function of various parameters, such as, switch stack...
Eight years after eight-incision radial keratotomy, a corneal ulcer developed around the inferotemporal incision in an otherwise healthy 39-year-old man. There was no history of corneal trauma or contact lens wear. Both Fusarium and Acanthamoeba organisms were eventually isolated from the ulcer. A therapeutic keratoplasty was performed. Inferotemporal incisions may be predisposed to epithelial...
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