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Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed logic applications, but the technology was modified to meet the performance needs of RF switches. The RF SOI technologies have been improved to follow the...
In this study, we define and investigate the maximum power handling capability (Pmax) in an SOI RF shunt branch switch. One of the critical factor in the Pmax is the non-uniform voltage division across an OFF shunt branch. In this study we provide a simple analytical method to determine the stack voltage imbalance. The Pmax is characterized as a function of various parameters, such as, switch stack...
Achieving radio frequency (RF) performance circuit objectives and electrostatic discharge (ESD) protection will continue to challenge future technology. In this study, we use the ultimate limitation of the transistor (known as the Johnson Limit) as a means to provide an ESD power clamp by utilizing a first low breakdown trigger device and a second high breakdown clamp device. Using the inverse relationship...
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