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In this article we use the ensemble Monte-Carlo method to study the frequency comb induced by a periodically excited tunnel junction on a semiconductor. The electron transport is modeled by solving the Boltzmann transport in p-type silicon doped with a concentration of 10^17 cm^-3. For a laser-pulse frequency of 100 MHz, we observe that, if the distance between the STM probe and the second electrode...
In this article we develop a mathematical algorithm for computing the spatial locations of ionized impurities in semiconductor materials using scanning capacitance microscopy (SCM) measurements. We show that SCM measurements can in principle be used to determine the coordinates of the doping atoms in a layer of a thickness equal to the width of the depletion region if the noise in the SCM measurements...
In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for 3-D dopant profiling. It is shown that SCM with probes that have a radius under 10 nm, could be potentially used to determine the x-y-z coordinates of the doping atoms (or ionized impurities) in a layer of a thickness equal to the width of the depletion region. An inversion algorithm that computes the locations...
In an MRI hyperthermia hybrid system, T 1 changes are investigated for monitoring thermal therapy at 0.2 T. The water bolus, which is needed for power transmission and cooling of the skin, limits MR image quality by signal compression and artifacts. Superparamagnetic ferrofluid in different concentration was investigated with MR relaxometry and MRI methods. We found that using ferrofluid in...
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