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Ultrashort-channel junctionless FETs (JL-FETs) were fabricated on silicon-on-insulator substrates utilizing atomically sharp V-shaped grooves produced by anisotropic wet etching. The channel length, defined as the width of the V-groove bottom, was as short as 3 nm, and the channel thickness was between 1 and 8 nm. Excellent transistor characteristics with threshold voltages that are optimal for low-power...
Electrical performances of ultra-short channel MOSFETs were investigated on SOI substrates. The channel length was scaled to 3 nm using the anisotropic wet etching technique. A difficulty of junction technology was solved by fabrication of Junctionless-FET, which consists of uniform high concentration dopants through the body of device. Superior Junctionless-FET performance was confirmed when the...
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