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Er doped nano-Si system has been optimised in terms of photoluminescence intensity and lifetime. Reduction of carrier absorption losses and increasing of the number of Er ions coupled to Si-nc (around 25%) have been achieved.
In this paper, the insertion losses, photoluminescence, lifetime and pump/probe measurements on Er-doped Si-rich silica layers have been carried out in this paper using rib-loaded waveguides.
The recent discovery of the efficient sensitizing action of silicon nanoclusters (Si-nc) toward Er3+ embedded in a SiO2 matrix has opened the field of several applications in integrated optoelectronic devices. In this configuration, the effective absorption cross section gains at least 3 orders of magnitude. Another rare earth ion (Nd3+) also presents an interest since its emission in the near infrared...
A detailed study of the free carrier absorption losses at 1.5 mum has been performed on silicon-nanocrystal rib waveguides by pumping at 532 nm. At the highest photon flux, the measured losses were about 6 dB/cm. We demonstrate that the dynamics of the carrier absorption is that of the luminescence.
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