The recent discovery of the efficient sensitizing action of silicon nanoclusters (Si-nc) toward Er3+ embedded in a SiO2 matrix has opened the field of several applications in integrated optoelectronic devices. In this configuration, the effective absorption cross section gains at least 3 orders of magnitude. Another rare earth ion (Nd3+) also presents an interest since its emission in the near infrared region is widely used in laser emission. However, Nd3+ ions incorporated in silica are also suffering from a weak direct excitation. Recent studies have evidenced the possible sensitizing role of Si-nc towards Nd3+ in such dielectric matrix by Se-Young Seo (2003). Nd3+-doped silicon-rich silicon oxide (SRSO) thin films have been fabricated by reactive magnetron sputtering of a pure silica target topped by Nd2O3 chips. The incorporation of silicon excess in the films is controlled by the partial hydrogen pressure, PH2, introduced in the Ar plasma. Photoluminescence (PL) experiments were made at room temperature using a Nd non resonant (488nm) excitation line from Ar laser. The composition of the samples was determined by Rutherford backscattering experiments.