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In this work we present an investigation on the program, erase and retention properties of TaN/Al2O3/HfO2/SiO2/Si (TAHOS) nonvolatile (NV) memory cells fabricated on an advanced gate-all-around (GAA) architecture. The influence of several device parameters on the above characteristics is quantitatively assessed by numerical simulation, using an in-house developed simulation code suitable for both...
This letter, for the first time, presents a metal high-kappa -high-kappa-oxide silicon-type charge-trapping nonvolatile memory fabricated on an advanced gate-all-around nanowire architecture with a top-down process. The high-kappa materials are integrated with a high work-function TaN gate electrode. The fabricated Si nanowire TaN/ Al2O3/HfO2/SiO2/Si (TAHOS) memory can achieve a higher speed at a...
Silicon nanowire based discrete trapped charge-storage nonvolatile memory cell employing high-kappa dielectrics with metal gate is presented for the first time. The nanowire TAHOS (TaN/Al2O3/HfO2/SiO2/Si) memory fabricated using top-down method in nearly gate-all-around (GAA) architecture showed higher P/E speed than SONOS. In TAHOS, the erase speed is found almost equal to the program speed. The...
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