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Conductive atomic force microscopy (CAFM) was used to investigate nano-electric performances of semiconductor MOS (metal-oxide-semiconductor) devices. Due to the small tip size (as small as ∼20 nm for PtSi probes), CAFM is capable of imaging both topography and current information of nano-device structures simultaneously with very high lateral resolution. Due to the use of wide ranges of current amplifier...
In this work, we present an electronic board used for conducting Interpenetrating Polymer Networks (IPNs) which can be used as sensors and/or actuators. The first prototype allows the user to generate custom signals for actuation purposes (steps, sine, triangle…). It can also record the deformations applied to the device by reading the voltage between the two electrodes. However, the voltage required...
We report on the influence of substrate thickness on the performance of antenna coupled microbolometers for terahertz (THz) detection. Planar antennas with NbsNó microbolometers were fabricated on silicon substrates. Detected voltages of these antenna-coupled microbolometers are altered with a periodic variation from 0.5 THz to 0.75 THz, which is accorded with the reflection of the substrate. By placing...
Short-range wireless terahertz (THz) communication and ultrafast THz interconnects require switches and modulators. Here, we experimentally show voltage-bias superconducting (SC) niobium nitride (NbN) metamaterial to realize a switch. The obtained maximum transmission coefficient at 0.507 THz is up to 0.98 and it drops to 0.19 when the applied voltage is only increased to 0.9 V. A relative transmittance...
This paper presents a terahertz (THz) spectrometer based on high temperature superconducting Josephson junction. The YBa2Cu3O7 (YBCO) bi-crystal Josephson junctions (JJS) with log-periodic antennas are used as detectors. In the low temperature, with the signal measurement, data acquisition and human-computer interactive system, the automatic measurement system of THz spectrometer is finally accomplished...
This paper presents a systematic characterization of a 650 V/13 A enhancement-mode GaN power transistor with p-GaN gate. Static and dynamic device characteristics are measured by taking into account of trapping induced effects such as current collapse and threshold voltage instability. Switching performance is evaluated up to 400 V, 10 A using a custom designed double-pulse test circuit. Optimal gate...
A novel phase change memory (PCM) cell with Additional Top Electrode (ATE) is introduced to investigate the scaling behavior of the off-state with the dimension of amorphous state region. The electrical conduction in ultra-thin amorphous state layer is investigated. The trap spacing is one of the key parameters that govern the conduction mechanism and threshold voltage in the sub-threshold region...
Reliability issues including random telegraph noise (RTN) and program disturbance in floating gate (FG) NAND strings for different junction dosages are compared. Although the initial threshold voltage (VT) distributions are similar for various source/drain (S/D) dosages, these samples exhibit different amplitudes on read current fluctuation. This current noise will induce inaccuracy in sensing level...
Based on Nb5N6 thin film, whose temperature coefficient of resistance is as high as -0.7% /K at room temperature, bolometer integrated with a planar bow-tie antenna has been designed and fabricated for detecting THz signal without the need to cool the bolometer itself. The best attainable electrical responsivity of the bolometer is about -400 V/W at a current bias of 0.4 mA. The electrical NEP is...
A novel zero voltage switching (ZVS) converter with output voltage doubler is presented. The output voltage doubler is used on the output side to achieve the boost type of voltage conversion ratio. Active-clamping technique is adopted to realize the ZVS turn-on of all switches, release the energy stored in the transformer leakage inductance and limit the voltage stresses on power switches. The ZVS...
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