The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this study, a sol-gel titanium dioxide (TiO2) was spin-coated on indium tin oxide (ITO) substrate as a sensing membrane for the extended-gate field-effect transistor (EGFET). To improve its sensing properties, the resultant films were thermal annealed at various temperatures. It shows that, as TiO2 was post-annealed at Ta=200oC for 30 min, a highest pH sensitivity of 79.9 µA/pH was derived. As...
In this study, a sol–gel TiO 2 thin film has been spin-coated on a commercial ITO glass substrate as the extended-gate field effect transistor (EGFET) for hydrogen ion sensing. The as-deposited films are further annealed at various temperatures (T a ) under ambient atmosphere. It is found that the bi-layer structure of TiO 2 /ITO EGFET exhibits good linear sensitivity from...
The GZO thin films of the thickness about 200∼250nm were deposited on the glass which used as a pH sensor head based on the extended-gate field-effect transistor (EGFET) by r. f. sputtering system in this study. The pH sensing characteristics of the GZO/glass EGFET sensing structure were investigated and a semiconductor parameter analyzer (Keithley 4200) was used to measure the drain-source current...
In this study, the AZO/Glass pH sensing structure was fabricated using r.f. sputtering at 10 mTorr and the power was set 100W. The thickness of AZO thin film was 204nm and the grain size was 40-50nm. Afterwards, the sensing structure connected with a standard metal-oxide-semiconductor field-effect transistor (MOSFET) as an extended-gate field-effect transistor (EGFET). The semiconductor parameter...
Indium tin oxide (ITO) thin films were deposited onto Si and SiO 2 /Si substrates using a radio frequency sputtering system with a grain size of 30–50 nm and thickness of 270–280 nm. ITO/Si and ITO/SiO 2 /Si sensing structures were achieved and connected to a standard metal-oxide-semiconductor field-effect transistor (MOSFET) as an ITO pH extended-gate field-effect transistor (ITO...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.