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The growth of GaP and AlAs/GaAs/GaP heterostructure nanowires on Si using Au colloids as catalysts was investigated. For GaP nanowire growth, we found an epitaxial relationship between the GaP nanowires and Si substrate. The AlAs/GaAs/GaP heterostructure nanowires were found to grow vertically on Si. Structural analysis indicates that the hetero-interfaces are within several atomic layers in thickness...
Transient simulations of GaN MESFETs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when...
Two-dimensional transient analyses of GaN MESFETs are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are included. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that so called current collapse or current reduction is more pronounced for a case with higher...
By using an ultra-low capacitance structure, the wavelength dependence, 1.3 or 1.55 mu m, of the intrinsic modulation bandwidth relating to the relaxation oscillation frequency and the nonlinear damping in GaInAsP DFB lasers is investigated.<<ETX>>
Ultrahigh-speed 1.55 mu m lambda /4-shifted DFB PIQ-BH lasers with best-ever 17 GHz bandwidth as a DFB laser have been developed. This large bandwidth is attained by reducing the parasitic capacitance with a low doped p-InP buried layer and a PIQ (Hitachi Chemicals polyimide) layer, and by enhancing the relaxation oscillation frequency by optimisation of the waveguide structures.<<ETX>>
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