The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Lattice dynamics, molecular vibrations as well as defects and traps in ultra-thin Hf-based gate dielectrics on Si and strained-SiGe layers have been studied using inelastic tunneling spectroscopy (IETS). Molecular vibrations, phonons, defects and trap-features are identified from IETS of the samples for comparing and analyzing different interface qualities.
Cloud computing and IT-service provisioning is critical for the growth of enterprises in being able to provision computationally intensive applications. A high-speed networks infrastructure is necessary for the proliferation of cloud computing to meet disparate IT application demands. Light-trails - a generalization of lightpath with ability to provision sub-wavelength demands, meet dynamic bandwidth...
The electrical characteristics and reliability of HfO2-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO2. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide...
Reliability characteristics of ZrO2 gate dielectric films on p-GaAs with ultrathin silicon (Si) interfacial passivated layer have been investigated. Results of a systematic study on the impacts of post deposition annealing (PDA) on the physical and electrical properties of RF-sputtered ZrO2 dielectric layers on Si-passivated p-GaAs substrates are reported. The electrical characteristics have been...
Charge trapping kinetics and chemical nature of defects present in Al/TaYOx/strained-Si/Si0.8Ge0.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.
Ultra thin (~6-7 nm) silicon-oxynitride films have been deposited on Strained-Si/Si0.8Ge0.2 layers at high temperature of 900degC and 1000degC using rapid thermal nitridation in O2+N2 ambient. The border trap (Qbt) generation using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.