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We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (??) enhancement (????/??) but also by the modulation of saturation velocity (vsat). It is found that vsat increases more by strain in smaller-????/?? devices. The...
The dependence of the interface-trap-induced scattering on the electron kinetic energy (epsivele) in nMOSFETs is investigated experimentally. The procedure to extract the accurate epsivele dependence of the interface-trap-induced scattering relationship is developed based on the careful Hall effect measurements. As a result, it is demonstrated that as epsivele increases, the interface-trap-induced...
This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Sub-band structure engineering to enhance mobility as well as ballistic current is also examined.
In this paper, the first systematic study of Vth variations (sigmaVth) and Idsat variations (sigmaIdsat) in (110) n/pMOSFETs is presented. sigmaVth in (110) n/pFETs with high channel dose are larger than (100) n/pFETs. It is found that the variations of B ion channeling, B-induced interface traps, and As-induced interface fixed charges enhance sigmaVth in (110) n/pFETs. Steep B profile and moderate...
Single-electron transistors (SETs) show promise as future functional elements in LSIs, because of their low-power consumption and small size. However, the low driving strength and the oscillating Id-Vg characteristic of SETs make them difficult to use in LSIs as alternatives of conventionally used MOS transistors. As electronics becomes ubiquitous, LSIs are expected to be more widely used in ultra-small...
We present the systematic study on dominant factors of the performance of scaled (110) n/pFETs. STI stress effects and velocity saturation phenomena in narrow and short (110) devices are investigated for the first time. Idsat of scaled (110) nFETs approaches (100) nFETs as a result of mu increase due to transverse compressive stress from STI in (110) nFETs and strong velocity saturation in (100) nFETs...
Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped...
The physical mechanisms of electron mobility (??e) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110). From full band calculations, uniaxial-stress-induced split of conduction band edge (??EC) and effective mass change (??m*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys...
It is shown that sub-0.1 mum Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate small-size random number generation circuit, which is required for cryptograph application in mobile network security. A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that...
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