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CuInTe 2 films were synthesized by graphite box annealing of In/Cu/Te stacked elemental layers (SEL) deposited by evaporation onto glass substrates. The films were polycrystalline with preferential orientation in the (112) direction. Lattice constants (a=0.62nm, c=1.24nm) were determined from the X-ray diffraction analysis. The optical band gap, determined from transmittance spectra, varied...
CuIn(S x Se 1-x ) 2 films were synthesized by sulphurization of In/Cu stacked elemental layers deposited onto glass and Mo-coated glass substrates followed by selenization by graphite box annealing. The films, thus synthesized, were characterized by measuring electrical, optical and microstructural properties. The microstructure and hence the physical properties of...
Amorphous hydrogenated carbon films with different nitrogen content (a-C:H:N) were deposited (thickness 2.65–3.01μm) by plasma-activated chemical vapour deposition of acetylene+nitrogen (0–62vol%) onto glass/Si substrates at a deposition temperature of ∼523K and a negative bias voltage ∼500V. The fundamental optical absorption edge was studied by optical transmittance measurements. With increasing...
Discontinuous silver films were deposited with different grain sizes and inter-grain distances by high-pressure magnetron sputtering technique. Temperature dependence of electrical conductivity indicated that variable range hopping is the predominant mode of electron transport in the films. The presence of a Coulomb gap near the Fermi level was also investigated.
Grain growth in CdTe films was studied by rapid thermal annealing of films prepared by co-deposition (at room temperature) of CdTe and CdCl 2 . Annealing conditions were varied to optimize the post-deposition heat treatment for obtaining CdTe films with larger grains. It was found that it is possible to obtain grains ~5 μm in size in CdTe films by the above techniques. Photoluminescence...
CdTe films were prepared by graphite box annealing of an evaporated CdTe precursor in different ambient conditions in the quartz annealing chamber. Large grain growth was observed for films synthesized at 710 K in argon atmosphere. The films thus produced were characterized by measuring the optical, microstructural and electrical properties.
Mixed phase a-C/diamond films were deposited on glass and fused silica substrates by dc magnetron sputtering of a vitreous carbon target in argon plasma. The optical characterization of the films, deposited at zero bias voltage, (V B = 0) indicated a high band gap (E g < 3 eV). E g increased further when deposited with negative bias voltage (V B = -100 V). The variations...
CuIn 1-x Ga x Se 2 (0 ≤ x ≤ 0.25) films were deposited (on glass substrates at ∼ 770 K) by four source coevaporation technique. The thickness and average grain size of the films varied within 3-3.5 μm and 0.2-0.5 μm, respectively, with small variation of surface roughness (18-24 nm). The films were characterized by measuring the microstructural, optical and mechanical...
Amorphous hydrogenated carbon (a-C:H) films were deposited (at room temperature) by plasma CVD of acetylene onto glass substrates with substrate bias (V B ) varying within 0 to -400 V. Films deposited at V B ≥ 200 V showed significant photoconductivity. The photoconductivity of the films was measured under different illumination level (0-100 mW/cm 2 ). Hopping at the shallow...
Diamond like carbon (DLC) films were deposited (thickness 100-130 nm) by RF plasma CVD of ethylene on to mica and silicon substrates at room temperature. Optical properties of the films deposited at different negative self bias (V B ) voltages (0 to -805 V) were measured. The refractive index (n) and extinction coefficient (k) of DLC films on mica varied within 1.6-2.1 and 0.035-0.128,...
ZnSe films were prepared by the hot wall evaporation technique onto glass, NaCl and KCl substrates at different substrate temperatures during deposition. The effect of deposition parameters on the grain growth, grain distribution and surface roughness were studied. Information on their optical properties was also obtained. Strength of grain boundary scattering in these films was critically studied...
A new technique to determine the optical constants and band gaps of a bilayer semiconductor film is described. The theory and the technique have been successfully applied to determine the optical parameters of individual layers for three bilayered semiconductor systems: CdS/CdTe, CdS/CuInSe 2 and ZnS/ZnSe.
An optical technique is proposed to determine the surface roughness and grain diameter for films having columnar grains and deposited onto nonabsorbing substrates.
A comprehensive description of the broadening of the absorption tail in polycrystalline semiconductor films has been presented by considering intrinsic inhomogeneity due to random distribution of grains and grain boundary regions and the fluctuation in potential from local thermal vibrations present at the grains and grain-grain interfaces. The model has been applied to describe the absorption data...
Of use in the optoelectronic field, CdTe has been prepared by vapour transport and electrodeposition processes and after a brief review of reported work an account is given of a study of the structural and electrical properties of CdTe films prepared by electrodeposition. The effect of the defect states on the carrier transport in CdTe films has been discussed critically by studying the space charge...
A method for evaluating the effective electron mass in compound semiconductors of the form AB x C 1-x or A x B 1-x C from the variation of band gaps in them is presented here. The effective masses of a number of ternary semiconductor films have been computed by using this method.
Polycrystalline CdTe films were deposited onto SnO 2 coated glass substrates using the electrodeposition technique with different deposition potentials, ranging from -670 to -725 mV, with respect to a saturated calomel electrode (SCE). The effect of the intercrystalline barrier on the carrier transport in CdTe films has been critically studied. The grain boundary potential (E b ),...
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