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ZnS films were prepared by the hot wall evaporation technique onto glass substrates at various temperatures in order to determine the optimum deposition conditions for preparation of stoichiometric films. The films predominantly had the zinc blende structure, and the surface roughness was found to decrease with increasing deposition temperature. Indium doping was found to increase the carrier concentration...
Polycrystalline CdTe films were deposited onto SnO 2 coated glass substrates using the electrodeposition technique with different deposition potentials, ranging from -670 to -725 mV, with respect to a saturated calomel electrode (SCE). The effect of the intercrystalline barrier on the carrier transport in CdTe films has been critically studied. The grain boundary potential (E b ),...
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