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In this paper we will discuss the CMOS circuit design strategies and main results for an all-CMOS MEMS based oscillator in order to reduce the oscillator far-to-carrier noise (which is limited by the circuit noise) and the close-to-carrier noise (which is limited by both the amplifier phase noise and the MEMS quality factor). The feasibility of using the Via layer of a commercial CMOS technology to...
In this paper a 25 MHz free-free beam flexural resonator monolithically integrated in a 0.35 um CMOS technology is presented. A comparison between the frequency response and electrical characteristics between free-free beam and clamped-clamped beams shows higher qualities factor for free-free beams which will allow better oscillators for frequency references in terms of phase noise.
Experimental results of a pulsed mode electrostatic excitation on a Double Ended Tunning Fork (DETF) MEMS resonator at 11 MHz fabricated on a commercial standard 0.35um CMOS technology are described. Using small pulse widths of 4 ns, a ten percent power safe and a reduction of the MEMS non-linearities are achieved.
In this work, the characterization of the first lateral in-plane flexural mode DETF (Double Ended Tuning Fork) MEMS resonator integrated monolithically in a CMOS 0.35μm technology is done. This characterization is done with the same resonator stand-alone and with an integrated CMOS amplifier to obtain the handling dynamic range of the applied voltage (dc bias and ac signal) for a linear behavior of...
In this paper a fully integrated CMOS-MEMS filter is presented. The filter is formed by two beams using a V-shaped coupler which allows the in-plane vibrations. The device presents a BW of 1.85 MHz for a 29 MHz center frequency. The electrical phase inversion mechanism is used in order to obtain the filter response. The device is fabricated using the capacitance module present in the commercial CMOS...
Clamped-clamped beam resonators are designed and fabricated in a 0.35 mum CMOS commercial technology, using a simple one-step mask-less wet etching to release the MEMS structures. The resonator, with a 22 MHz resonance frequency shows a Q value of 227 and 4400, when measured at atmospheric pressure and vacuum, respectively. This resonator is used as the main building block for filtering application...
Wafer scale nanostencil lithography is used to define 200 nm scale mechanically resonating silicon cantilevers monolithically integrated into CMOS circuits. We demonstrate the simultaneous patterning of ~2000 nano-devices by post-processing standard CMOS wafers using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies around...
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