Search results for: Hailing Tu

Items from 1 to 20 out of 45 results

article

An AIE‐Active Ultrathin Polymeric Self‐Assembled Monolayer Sensor for Trace Volatile Explosive Detection

Mingliang Li, Kefeng Xie, Guozhi Wang, Jing Zheng, more

Macromolecular Rapid Communications > 42 > 23 > n/a - n/a

Front Cover: Based on the aggregation‐induced emission (AIE) effect, an ultra‐thin self‐assembled monolayer (SAM) sensor for trace nitro explosives is designed by Ziwei Li, Feng Wei, Jinyao Tang, and co‐workers, in article 2100551. The polymeric SAMs are fabricated by covalent bonds to the substrate, and prove to show good stability, sensitivity, selectivity, and reversibility. The sensing properties...

article

An AIE‐Active Ultrathin Polymeric Self‐Assembled Monolayer Sensor for Trace Volatile Explosive Detection

Mingliang Li, Kefeng Xie, Guozhi Wang, Jing Zheng, more

Macromolecular Rapid Communications > 42 > 23 > n/a - n/a

This work has prepared polymeric self‐assembled monolayer (SAM) sensors for the detection of trace volatile nitroaromatic compound (NAC) explosives by fluorescence quenching. A typical aggregation‐induced emission (AIE) luminogen 1,1,2,2‐tetraphenylethene (TPE) polymerizes into PTPE to increase the fluorescence intensity in the SAMs, and the phosphoric acid acts as the anchor group to form stable...

article

Preface from the Honorary Editor in Chief

Hailing Tu

Tungsten > 2019 > 1 > 1 > 3-4

article

Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays

Qingzhu Zhang, Hailing Tu, Huaxiang Yin, Feng Wei, more

Microelectronic Engineering > 2018 > 198 > C > 48-54

In this work, the impact of hard masks (HMs) profiles on nanometer scalloped-fins (S-fins) by reactive ion etching (RIE) is extensively investigated. A popular spacer image transfer (SIT) process originated from conventional FinFET mass fabrication is adopted for the formation of the S-fins arrays by using a new developed time division multiplexing (TDM) etching process. It is observed that the higher...

article

Editorial

Hailing Tu

Journal of Analysis and Testing > 2017 > 1 > 1 > 1-2

article

Nonvolatile Electrochemical Metallization Memory Based on Nanocrystalline La₂O₃ Solid Electrolyte Thin Film

Hongbin Zhao, Hailing Tu, Feng Wei, Yuhua Xiong, more

IEEE Journal of the Electron Devices Society > 2015 > 3 > 3 > 254 - 259

Nanocrystalline La₂O₃ thin films are deposited on Pt/Ti/SiO₂/Si substrate by reactive radio frequency magnetron sputtering. The Ag/La₂O₃/Pt devices exhibit reversible bipolar resistance change over 1000 cycles with a resistance ratio (high resistance state to low resistance state) of over three orders of magnitude and stable retention for over

$10^{6}$

s at room temperature. Analysis indicates that...

article

Microstructures and hydrogen storage properties of ZrFe2.05−xVx (x=0.05–0.20) alloys with high dissociation pressures for hybrid hydrogen storage vessel application

Lijun Jiang, Youlong Tu, Hailing Tu, Liquan Chen

Journal of Alloys and Compounds > 2015 > 627 > Complete > 161-165

The microstructures and the hydrogen absorption/desorption properties of ZrFe _2.05− _x V _x (x=0.05, 0.10, 0.15, 0.20) alloys have been studied by XRD, SEM/EDS, P-C isotherm and hydrogen absorption kinetics measurements. It is found that the C15 Laves phase is the dominant phase of the alloys and its lattice parameters and unit cell volumes increase with increase in the V substitution,...

article

Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO₂ gate dielectric films

Yuhua Xiong, Hailing Tu, Jun Du, Ligen Wang, more

physica status solidi (b) > 251 > 8 > 1635 - 1638

The interaction of Gd and N incorporation on the band gap, band offset, and oxygen vacancies of HfO₂ high‐k gate dielectric films has been investigated. The results show that introducing N (9.7% and 17.4%) and Gd into HfO₂ does not dramatically reduce the band gap due to the counteracting effect of Gd doping. Most importantly, Gd and N co‐doping increases the conduction band offset of HfO₂ and leads...

article

Highly Transparent Dysprosium Oxide-Based RRAM With Multilayer Graphene Electrode for Low-Power Nonvolatile Memory Application

Hongbin Zhao, Hailing Tu, Feng Wei, Jun Du

IEEE Transactions on Electron Devices > 2014 > 61 > 5 > 1388 - 1393

A highly transparent resistive random access memory with a configuration of multilayer graphene (MLG)/

${\rm Dy}_{2}{\rm O}_{3}$

/indium tin oxide (ITO) structure is demonstrated in this paper. The fabricated device is transparent, with 80% transmittance at 550 nm. The MLG/

${\rm Dy}_{2}{\rm O}_{3}$

/ITO device shows unipolar resistance switching with a low operation current

$({<}{\rm 100}~\mu{\rm A})$

...

article

High performance DLC/BP and ZnS/YbF3 double-layer protective and antireflective coatings

Wei Liu, Hailing Tu, Ming Gao, Xiaoping Su, more

Journal of Alloys and Compounds > 2013 > 581 > Complete > 526-529

A double-layer coatings structure on the surface of ms-ZnS substrate is designed and fabricated. The outer face of the ms-ZnS is coated with DLC/BP as high performance protective and antireflective coatings, and the inner face is coated with YbF ₃ and ZnS as high efficient antireflective coatings. The transmittance, nano-hardness and environmental durability of the coated ms-ZnS are measured...

article

Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer

Xinqiang ZHANG, Hailing TU, Feng WEI, Yuhua XIONG, more

Journal of Rare Earths > 2013 > 31 > 11 > 1092-1095

The GHO (Gd ₂ O ₃ -doped HfO ₂ ) films were epitaxially grown on Ge (001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) observation revealed a sharp interface of GHO/Ge and orientation relationship corresponding...

article

The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM

Hongbin Zhao, Hailing Tu, Feng Wei, Xinqiang Zhang, more

Solid State Electronics > 2013 > 89 > Complete > 12-16

We present effects of an amorphous TiO _x layer formation on the behavior of a unipolar resistive switching memory device, which consists of Pt/Ti embedding layer (Ti-EL)/Dy ₂ O ₃ /Pt structure. The better properties have been obtained from the Pt/Ti-EL/Dy ₂ O ₃ /Pt system, including lower switching voltage, higher switching uniformity, and better endurance,...

article

Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

Mengmeng YANG, Hailing TU, Jun DU, Feng WEI, more

Journal of Rare Earths > 2013 > 31 > 4 > 395-399

Effects of NH ₃ rapid thermal annealing (RTA) on the interface and electrical properties of Gd-doped HfO ₂ (GDH)/Si stack were investigated. The process of NH ₃ annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH ₃ annealing also led to the decrease of interface layer thickness...

article

The atomic and electronic structure of amorphous BP4

Wei Liu, Fengchun Pang, Hailing Tu, Xianbin Li, more

Journal of Alloys and Compounds > 2012 > 545 > Complete > 144-147

First-principles simulation and PACVD experiment are used to reveal the atomic and electronic structure of BP ₄ . With melting–quenching technique in molecule dynamics, for the first time we obtain the microscopic atomic picture for the amorphous BP ₄ . Here, boron essentially retains a coordination number of 4 and sp ³ electronic bonding whereas phosphorus has a lower coordination...

article

Structural, mechanical properties and composition analysis of boron phosphide coatings

Wei Liu, Hailing Tu, Hai Yang, Shuyu Zhang, more

Journal of Alloys and Compounds > 2012 > 538 > Complete > 169-172

Boron phosphide (BP) coatings were deposited on ZnS substrate by PACVD with diborane (B ₂ H ₆ ) and phosphine (PH ₃ ) as the precursors. The XRD and SEM showed that all the BP coatings were amorphous when the PH ₃ flux changed from 40 to 80sccm. The hardness and the elastic modulus of the BP coatings decreased with the increase of PH ₃ flux. The composition...

article

Self-assembled SiGe nanoparticles integrated into SOI

Wenting Xu, Hailing Tu, Dali Liu, Qinghua Xiao, more

Materials Letters > 2012 > 72 > Complete > 39-41

SiGe nanoparticles with uniform diameter of about 30nm in the top silicon of silicon on insulator (SOI) were synthesized by Ge ion implantation combined with subsequent annealing process. The density of those nanoparticles is 6×10 ⁷ /cm ² . These nanoparticles are formed by agglomeration of the recoil atoms and the migrated adatoms. The method presented in this study will allow efficient...

article

Evolution of SiGe nanoclusters and micro defects in the Si1−xGex layer fabricated by two-step ion implantation and subsequent thermal annealing

Wenting Xu, Hailing Tu, Qinghua Xiao, Qing Chang, more

Applied Surface Science > 2011 > 257 > 22 > 9260-9263

The Si _1−x Ge _x thin layer is fabricated by two-step Ge ion implantation into (001) silicon. The embedded SiGe nanoclusters are produced in the Si _1−x Ge _x layer upon further annealing. The number and size of the nanoclusters changed due to the Ge diffusion during annealing. Micro defects around the nanoclusters are illustrated. It is revealed that the change of Si–Si...

article

Stress relaxation of Si/Si_1−xGe_x/Si structure prepared by ion implantation and subsequent annealing process

Wenting Xu, Hailing Tu, Qing Chang, Qinghua Xiao

Rare Metals > 2011 > 30 > 3 > 270-273

The stress relaxation of ⁷⁴Ge⁺-implanted (100) silicon wafers was investigated. The implantation energy as a function of Si/Si_1−xGe_x/Si structure fluence and two kinds of thermal annealing were reported. The stress and stress relaxation after thermal annealing were calculated on the basis of Raman analysis, and were compared with those obtained from the calculation of virgin Si.

chapter

Fabrication and electronic characterization of epitaxial Gd₂O₃-doped HfO₂ dielectrics on Si

Xinqiang Zhang, Hailing Tu, Xiaona Wang, Mengmeng Yang, more

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology > 1036 - 1038

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

The 5-nm-thick HfO₂ film doped with 35 mol% Gd₂O₃ (GDH) as a high k dielectric has been epitaxially grown on Si (100) substrate by pulsed laser deposition (PLD). In situ reflection high-energy electron diffraction (RHEED) evolution of the (100)-oriented GDH during the deposition has been investigated and shows that a two-dimensional (2D) single crystalline GDH grows with a smooth surface. The in-plane...

chapter

GeSi/Si nanostructure formation by Ge ion implantation in (100) silicon wafer

Wenting Xu, Hailing Tu, Qing Chang, Qinghua Xiao

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology > 903 - 904

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

In this work, two kinds of thermal annealing methods were used to process the silicon wafer by Ge ion bombardment in two steps, dose of 7×10¹⁶/cm² with 150KeV and dose of 2.72×10¹⁶/cm² with 50KeV respectively. In order to control the defects density and Ge distribution in SiGe layer, furnace annealing (FA) and rapid thermal annealing (RTA) schedules were used. It has been found that the FA after ion...

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INFONA - science communication portal

Search results for: Hailing Tu

An AIE‐Active Ultrathin Polymeric Self‐Assembled Monolayer Sensor for Trace Volatile Explosive Detection

An AIE‐Active Ultrathin Polymeric Self‐Assembled Monolayer Sensor for Trace Volatile Explosive Detection

Preface from the Honorary Editor in Chief

Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays

Editorial

Nonvolatile Electrochemical Metallization Memory Based on Nanocrystalline La₂O₃ Solid Electrolyte Thin Film

Microstructures and hydrogen storage properties of ZrFe2.05−xVx (x=0.05–0.20) alloys with high dissociation pressures for hybrid hydrogen storage vessel application

Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO₂ gate dielectric films

Highly Transparent Dysprosium Oxide-Based RRAM With Multilayer Graphene Electrode for Low-Power Nonvolatile Memory Application

High performance DLC/BP and ZnS/YbF3 double-layer protective and antireflective coatings

Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer

The enhancement of unipolar resistive switching behavior via an amorphous TiOx layer formation in Dy2O3-based forming-free RRAM

Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

The atomic and electronic structure of amorphous BP4

Structural, mechanical properties and composition analysis of boron phosphide coatings

Self-assembled SiGe nanoparticles integrated into SOI

Evolution of SiGe nanoclusters and micro defects in the Si1−xGex layer fabricated by two-step ion implantation and subsequent thermal annealing

Stress relaxation of Si/Si_1−xGe_x/Si structure prepared by ion implantation and subsequent annealing process

Fabrication and electronic characterization of epitaxial Gd₂O₃-doped HfO₂ dielectrics on Si

GeSi/Si nanostructure formation by Ge ion implantation in (100) silicon wafer

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