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We have combined nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) and spectroscopic ellipsometry (SE) to measure the energies and depth distribution of charge traps in SiO2/SiOx/SiO2 gate dielectrics for radiation-tolerant electronics. It is now known that suboxide layers within silicon-on-oxide (SOI) structures result in Si nanoclusters that can reduce the shift of the flatband voltage...
Dual layer dielectrics have been formed by remote PECVD of ultra-thin (0.4/spl sim/1.2 nm) nitrides on thin thermal oxides grown on n-type Si(100) substrates. Activation of boron-implanted p/sup +/ polycrystalline silicon gate electrodes was accomplished by a high temperature anneal for 1/spl sim/4 minutes at 1000/spl deg/C. Boron penetration through the dielectric film to the n-type substrate was...
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