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We have combined nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) and spectroscopic ellipsometry (SE) to measure the energies and depth distribution of charge traps in SiO2/SiOx/SiO2 gate dielectrics for radiation-tolerant electronics. It is now known that suboxide layers within silicon-on-oxide (SOI) structures result in Si nanoclusters that can reduce the shift of the flatband voltage...