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A strong demand of even more compact and reliable power electronic devices has powered in the last years the development of advanced device design techniques. A key role in these techniques is played by the reliability assessment, a procedure that estimates the expected lifetime of power devices according to given mission profiles. The reliability assessment of a low voltage MOSFET working in avalanche...
Calibrated 3-D numerical simulations supported by DC experimental data are employed to quantify the impact of the key layout and technology parameters on the thermal resistance of state-of-the-art SiGe heterojunction bipolar transistors (HBTs) so as to define proper optimization criteria. The geometry parameters of a simple scalable model are optimized to describe the thermal resistance dependence...
The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional...
The future astroparticle experiments will study both energetic phenomena and extremely rare events from astro-physical sources. Since most of these families of experiments are carried out by using scintillation phenomena, Cherenkov or fluorescence radiation, the development of photosensitive detectors seems to be the right way to increase the experimental sensitivity. We therefore propose an innovative...
Calibrated 3-D numerical simulations are employed to quantify the influence of design parameters like emitter area, aspect ratio, distance to trenches, and thickness of AlN heatspreaders on the thermal transient behavior of silicon-on-glass (SOG) bipolar transistors. A larger silicon island enclosed in the trenches reduces the thermal resistance at the expense of a slower thermal response of the system...
The impact of layout parameters on the thermal behavior of BJTs with full dielectric isolation is extensively analyzed by measurements and numerical simulations. The influence of the aspect ratio of the emitter stripe as well as the consequences of the device scaling are investigated from a thermal viewpoint. It is shown that the metallization design plays a key role in the thermal response of fully-isolated...
CHIMERA is the only 4 pi-multidetector, used in intermediate nuclear physics experiments, able to perform mass identification of the reaction products. To this purpose, it employs time of flight measurements done with traditional time to digital converters. In order to improve the resolution in mass identification, we have applied digital signal processing to time of flight measurements. This paper...
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