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Calibrated 3-D numerical simulations supported by DC experimental data are employed to quantify the impact of the key layout and technology parameters on the thermal resistance of state-of-the-art SiGe heterojunction bipolar transistors (HBTs) so as to define proper optimization criteria. The geometry parameters of a simple scalable model are optimized to describe the thermal resistance dependence...
The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional...
The impact of the concurrent action of electrothermal and avalanche effects on the reduction of the safe operating area is experimentally investigated for a wide number of single-, two-, and three-finger bipolar transistors fabricated in SiGe, GaAs, and silicon-on-glass technologies. The results of the analysis are substantiated by a SPICE-like simulation tool that allows the monitoring of the temperatures...
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