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This paper presents authors motivation and experience gained through creation of eLearning course named “GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits” located on portal “eLearn central”. The main aim of the course is to present new technologies and concepts of HEMTs and is intended primarily for scholars at Middle schools. This paper shows that eLearning...
This paper reports on degradation processes in the AlGaN/GaN HEMTs under high drain-bias off-state stress. The devices were off-stressed at the drain voltage of 60 V and the gate voltage of −5 V for 30 min, resp.60 min. Static device performance was evaluated before, during and after the stress. Performed measurements show a slight degradation in the drain current and a decrease of the threshold voltage...
Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of...
In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The...
The scanning electron microscope (SEM) techniques play a key role in the characterization of various inorganic and/or organic semiconducting materials, micro/nanostructures and devices. The power of the SEM methods is mainly in imaging, characterization and diagnostics of local near surface properties. Among a variety of the SEM methods, Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC)...
This contribution reports on properties and characterization of InAlN/GaN structures prepared by metal organic chemical vapour deposition (MOCVD) using secondary ion mass spectroscopy (SIMS). The SIMS revealed the vertical cross section of the InAlN/GaN sample structures on SiC substrate and also visualizes the different growth procedure results. The SIMS comparison of the structures shows the Al,...
Reliability of the AlGaN/GaN HFETs was investigated by applying a short-time (70 min) off-state stress: the drain voltage was 50 V and the channel was pinched off. Significant decrease of the drain current at the stressing conditions was observed. Simultaneously, a decrease of the gate currents was found. On the other hand, the transconductance and threshold voltage did not changed with the stressing...
Electrical properties of the ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices were investigated. Two different preparation techniques were used, electron beam evaporation (EBE) and pulsed laser deposition (PLD). The EBE contacts show more than 10-times lower specific contact resistance than those prepared by PLD. Characterization of the HFETs prepared yielded higher saturation drain current...
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