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Electron mobility of ultra thin body (UTB) GeOI «MOSFETs with body thickness (Tbody) down to 3 nm has been systematically investigated and significant mobility enhancement with decreasing Tbody has been observed for the first time. This channel thickness scaling induced mobility enhancement can be attributed to the unique physical property of ultra thin Ge where the electron effective mass reduces...
Triangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. Triangular shaped channels with bottom width down to 30 nm were formed by MOVPE growth on narrow InGaAs-OI fins. The formed (111)B surface was demonstrated to provide higher mobility compared with reference InGaAs-OI tri-gate (1.9×) as well as bulk (100) InGaAs nMOSFETs (1.6×), which is...
We have successfully fabricated InGaAs-OI tri-gate nMOSFETs, for the first time. The devices were depletion-type (p-n junction-less) nFETs with Fin-channel width (Wfin) down to 20 nm and had metal source/drain structures. It was experimentally demonstrated that Wfin scaling effectively improved cut-off properties at Nd up to 5 × 1018 cm−3 and the electron mobility in the narrowest channel (Wfin =...
It has been well recognized that continuous increase in drive current is mandatory for successive growth of future CMOS LSIs. This means that the mobility enhancement has to keep being pursued in each technology node. For this purpose, a variety of local strain and global strain techniques have recently been developed and some of them have already been implemented in real products as presented in...
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