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The performance of MIS devices on Ge substrate using AlN and Al2O3 as interfacial layer is investigated. Using AlN as interfacial layer can achieve lower leakage current and smaller hysteresis than using Al2O3 because AlN is a more effective barrier to against GeO volatilization and Ge diffusion. However, the interface state density of the AlN/Ge structure is poor. It is found that capping AlN on...
It is known that high dielectric constant (high-k) dielectric deposition on ultrathin GeO2 would damage the quality of GeO2 and degrade the interface. Both Al2O3 and AlN have been proposed as intermediate layer between high-k dielectric and GeO2, but the process has not been optimized. In this work, it is observed that the N2-plasma-nitrided Al2O3 is a good intermediate layer to suppress GeOx volatilization...
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