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In this paper, an analytical model of intrinsic carbon-nanotube field-effect transistors is presented. The origins of the channel carriers are analyzed in the ballistic limit. A noniterative surface-potential model is developed based on an analytical electrostatic model and a piecewise constant quantum-capacitance model. The model is computationally efficient with no iteration or numerical integration...
Because of high carrier velocities and quasi-ballistic transport properties, carbon-based (nanotube, graphene) field effect transistors (CNFETs) are considered to be potential candidates to replace CMOS in future technology generations . Most prior modeling of CNFETs has involved complex models, such as NEGF , but to properly evaluate these devices in circuits and systems, efficient compact models...
A simple and efficient model of carbon nanotube field effect transistor (CNFET) is necessary to perform system-level optimization. In this paper, an analytical model with no iteration or integration is developed, including an analytical electrostatic model for the surface potential and simplification of scattering effects. The model is computationally efficient, but includes essential physics such...
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