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We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z2-FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z2-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.
In this paper, we discuss the principles of operating the electric spring (ES) as a reactive power compensator and as a power factor corrector. The theory on electric springs with capacitors for voltage stabilization is reviewed to present a general idea on the behavior of ES. Further discussion focuses on the principle of ES with batteries to cover its eight possible operating modes and their usefulness...
Reference-current-based active compensation techniques are widely used to actively damp the negative admittance effect associated with constant power loads in power electronic systems. These methods, however, yield strong coupling among the active compensator, speed, and current control dynamics when applied to motor drives. To overcome these difficulties, a new reference-voltage-based active compensator...
This paper presents a new neutral point balancing strategy for the five-level diode clamped converter (DCC) which can be used in STATCOM (static synchronous compensator) of wind energy conversion systems (WECS), with lower switching frequency below 1 kHz. The proposed space vector modulation (SVM) strategy reduces voltage variations at the converter neutral point, with no need for additional controls...
Floating gate interference resulting from capacitive coupling through parasitic capacitors surrounding the floating gate degrades the cell characteristics such as current, speed and cell Vth distribution. For the first time, we have introduced the cell characteristics improved using low-k dielectric of gate spacer such as oxide and air gap in 1Gb NAND flash memory
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