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Since Cree, Inc.'s 2nd generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (RON, SP) of 5 mΩ·cm2 for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission...
High Ge concentration Si:Ge solar cell based on low cost Si substrate fabricated by RTCVD can be applied in multi-junction solar cell system to absorb infrared light. First principle design shows that ideally Si:Ge solar cell with 90% Ge concentration can contribute 6.2% efficiency with 16.6mA/cm2 Jsc, 472mV Voc and 79.5% FF to a multi-junction solar cell system with a 300um silicon solar cell on...
Solution-processed spherical surface textures are demonstrated as a cost-effective antireflection coating on commercial amorphous Si solar cells. The spherical textures are formed with a monolayer of silica microspheres by convective coating, followed by a spin-on-glass film. It is found that the spherical texture reduces the reflectance of the cells in a broad wavelength range of 400 - 1,200 nm....
The resistive switching behavior of Ag/Si3N4/Pt device was observed and studied for the first time. Resistance ratio larger than 4*102 and 104s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si3N4/Pt devices.
In this paper we propose a “build-up” approach for surface texturing on solar cells. By coating solar cells with a monolayer of dielectric microparticles, followed by a dielectric film with a thickness less than the height of the particles, a surface texture can be formed on almost any type of solar cells. More importantly, this texture is prepared by solution coatings, ensuring its low cost. Dielectric...
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