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We report a comprehensive etching study on the gate recess step for the fabrication of the novel high speed pHEMT devices. The experiments focused on the elimination of “hump” structure as a result of an incomplete etching process at the InGaAs cap layer. In this work, two types of test samples were used, namely bulk InGaAs and epitaxial structure together with an etch stop layer. The result showed...
HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the device. The heterostructure of pHEMT improve the performance two-dimension electron gas (2DEG) in the channel layer. With these, pHEMT is believed could...
This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are brought about by a judicious combination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement...
Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ~ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB.
This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 muA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry,...
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