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We experimentally demonstrate an isolator suitable for the THz spectral regime. The isolator is designed by combining a polarizing beamsplitter with a quarter-wave plate, both based on the same artificial-dielectric technology. The artificial-dielectric medium comprises of a stack of 30 μm thick metal plates that form an array of parallel-plate waveguides. The isolator exhibits an isolation of 52...
Germanium has higher hole mobility and is a candidate for replacing silicon for pMOSFETs. This work reviews the recent progresses in understanding the negative bias temperature instability (NBTI) of Ge pMOSFETs and compares it with SiON/Si devices. Both Ge and SiON/Si devices have two groups of defects: as-grown hole traps (AHT) and generated defects (GDs). The generation process, however, is different:...
Random Telegraphy Noise (RTN) and Negative Bias Temperature Instability (NBTI) are two important sources of device instability. Their relation is not fully understood and is investigated in this work. We examine the similarity and differences of the defects responsible for them. By following the As-grown-Generation (AG) model proposed by our group, we present clear evidences that the As-grown hole...
Atmospheric pressure dielectric barrier discharge(DBD) plasma surface treatment is a useful means to modify the properties of polytetrafluoroethylene(PTFE) films, such as hydrophily, adhensive ability. A generator with more dielectric layers will affect the plasma characteristics, and then affects the treatment effects on PTFE films. To investigate this influence, some experiments were carried out...
Epoxy used as insulating material in electronic and electrical devices plays an important role in system reliability. Addition of nanoparticles into epoxy can improve the insulating properties compared with undoped material. However, due to the change of the material structure, trap characteristics and charge behaviors are altered as a consequence. This possibly leads to a great risk of electric field...
Epoxy resin has become an integral part of electronic and electrical devices for their excellent mechanical and electrical performance. Nano-composite technology makes it possible to improve electrical properties of insulating materials. For the use of nanocomposites of epoxy resin, it must be confirmed whether the electrical performance with nanoparticles is different from that without nanoparticles...
Effect of backend interconnect critical dimension variation on IMD TDDB is studied. Statistical data shows that low-k dielectric TDDB time to failure correlates well with leakage current, which reflects actual trench-to-trench or trench-to-via spacing. So a lifetime projection method, based on equal electric field, is reported. A more realistic lifetime is achieved while predicting whole lot TDDB...
The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an...
Highly (100)-oriented Ba(Zr 0.2 Ti 0.8 )O 3 (BZT) film with nano-sized grains of 30–50nm is deposited on Pt/Ti/SiO 2 /Si substrate by pulsed laser deposition. The dielectric constant and loss tanδ at a frequency of 1MHz are 792 and 0.020, respectively. The tunability is 69% at 187.5kV/cm.
We report the first characterization of the complex conductivity and absorption of an n-type GaN freestanding crystal by terahertz time-domain spectroscopy (THz-TDS) over the frequency range from 0.1 to 4 THz. The measured conductivity was well fit by Drude theory.
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