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Despite their excellent control of short channel effects, FinFETs suffer from different trade-offs in the mixed-signal domain, with respect to planar devices. For the first time, we report a complete and comprehensive comparative analysis showing that these trade-offs can be alleviated in advanced FinFET technology. As such, higher voltage gain and transconductance than planar MOSFETs are reached...
FinFET technology presents a competitive alternative to planar CMOS as it features a better control of the short channel effects. This results in improved digital and analog performances. The radio-frequency (RF) behavior is however affected by a large level of parasitics. In this paper, we explain how technological options and device design affect the FinFET performance. In addition, the challenges...
For the first time, nMOS varactors fabricated in FinFET technology were characterized and modeled at microwave frequency. The RF analysis is carried out as a function of the fin width. It is shown that the fin width has nearly no impact on the tuning range of the device, but on the quality factor (Q). Best Q's are obtained for wide fin devices, mainly due to the reduction of the series resistances,...
Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications...
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