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The authors present a study of SiGe HBTs with FT>200GHz on an SOI substrate for the first time. The devices built on SOI exhibit a degradation of approximately 7 Ghz in Ft as compared with bulk devices while Fmax remains near 280 GHz. As expected, Ccs is reduced by ∼ 40%. A loss of about 0.75 V in safe operating area is observed for the HBTs built on SOI, but approximately half of this can be regained...
An equation-based method combing field equations with circuit solver is proposed for calculating electromagnetic susceptibility (EMS) on printed circuit board (PCB). These equations can be simplified to a voltage source and a current source, and then substituted into commercial software to calculate the impact of incident electromagnetic waves on traces on PCB. This paper compares the results calculated...
It is well known that the national demand for energy has soared considerably in China with its rapid economic growth, which, however, results in increasing emission of carbon dioxide accordingly. This article attempts to obtain the grey correlation degree between total energy consumption and gross carbon dioxide emission together with the prediction of them.
An experimental study was conducted to investigate the feasibility of fabricating relatively long nanochannels on hard and brittle silicon dioxide surface using atomic force microscopy (AFM) based lithography. Specifically, the relationship between the applied AFM tip force and the resultant nanochannel depth was measured and analyzed. The nanochannels were fabricated by two different AFM lithographic...
Vertically aligned Fe-doped ZnO nanorod arrays (ZnO:Fe NRAs) with weak ferromagnetism at room temperature (RT) have been fabricated by in situ doping of Fe into ZnO nanorods (NRs) using a simple thermal chemical vapor deposition method. Structure analyses indicated that the NRs have a single-crystalline wurtzite structure without any detectable segregated cluster or impurity phase. Both photoluminescence...
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