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This paper highlights a 14nm Analog and RF technology based on a logic FinFET platform for the first time. An optimized RF device layout shows excellent Ft/Fmax of (314GHz/180GHz) and (285GHz/140GHz) for NFET and PFET respectively. A higher PFET RF performance compared to 28nm technology is due to a source/drain stressor mobility improvement. A benefit of better FinFET channel electrostatics can be...
An advanced Replacement Metal Gate (RMG) module was developed for 14nm node FinFETs and beyond. STI oxide extra recess increases on-current without any dedicated Source and Drain (SD) optimization. Tungsten (W) selective etch recesses work function metal (WFM), which reduces gate-contact capacitance, and improves AC performance and yields by increasing gate-contact space. Combination of work function...
With newer technology nodes, circuit/device/process codesign is essential to realize the advantages of scaling. Leveraging co-design approach based on a well-established manufacturing flow, a cost effective 28 nm 4G SOC technology has been crafted. This 28 nm design strategy uses two sets of design rules and 7 different Vt cells with optimal power gating to achieve a 2.4× increase in gate density,...
We report here on a novel 3-axis MEMS accelerometer intended to meet the requirements of a high volume, very low cost sensor in consumer gaming and hand-held applications. In order to balance the performance and cost requirements of such applications, this device achieves 3-axis sensing with a single proof-mass. This accomplishment required significant process, device, and test design novelty. Because...
In recent years, a variety of new routing protocols for mobile ad hoc wireless NETworks (MANETs) have been developed. Performance evaluation and comparison of many of these routing protocols have been done using detailed simulation models. Zone routing protocol (ZRP) is one of these routing protocols, which is a hybrid routing protocol that proactively maintains routing information for a local neighborhood...
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