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An advanced Replacement Metal Gate (RMG) module was developed for 14nm node FinFETs and beyond. STI oxide extra recess increases on-current without any dedicated Source and Drain (SD) optimization. Tungsten (W) selective etch recesses work function metal (WFM), which reduces gate-contact capacitance, and improves AC performance and yields by increasing gate-contact space. Combination of work function...
In this paper, we describe the performance elements used in our 28nm bulk devices with the gate first high-k/metal gate scheme for high performance applications. By using the innovative stressor integrations including improved stress memory technique (SMT), optimized embedded SiGe process and dual stress liner, Ieff of ~540/360 uA/um have been obtained for NMOS and PMOS respectively with the gate...
This work demonstrates that the 2?? mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190nm poly-pitch for devices under compressive stress. (110) PMOS with 3.5GPa compressively stressed liners demonstrate strong channel drives with Ion=800 ??A/??m at Ioff=100nA/??m (Vdd=1.0V) for 190nm poly-pitch, the highest reported to date for 45-nm-node (110) PMOS using conventional gate...
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