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Ruthenium (Ru) as the semi-insulated doping material for InP has good characteristics in terms of the capacitance and heat dissipation of the current blocking layer for Laser Diodes. However unintentional Zn diffusion from adjacent p-InP into Ru-InP causes the degradation of Laser characteristics such as the output power. In this paper, we fabricated p-InP/Ru-InP/p-InP (p/Ru/p-InP) structure by Metalorganic...
A world record-setting efficiency of 35.8% at AM1.5G (x1) has been demonstrated by an InGaP (1.88 eV)/GaAs/InGaAs (0.97 eV) triple-junction solar cell fabricated using the inverted layer transfer process. Lattice-matched top and middle cells are grown first. Then, a lattice-mismatched bottom cell is grown to attain good crystal quality for the top and middle cells. A large stress caused by the increasing...
A Super Junction (SJ) MOSFET with high aspect ratio p/n columns structure has been proposed to improve the trade-off relationship between breakdown voltage and specific on-resistance (Ron)- We have proposed a new trench filling epitaxial growth technique to fabricate this structure. In this work, we tried to apply this method to 600 V-class SJ-MOSFETs. We succeeded in fabricating p/n columns structure...
In this paper, we demonstrate that a two-dimensional arrangement of vertical cylindrical domains of asymmetric poly(styrene-b-methyl methacrylate) (PSt-b-PMMA) is achieved by graphoepitaxy using a resist pattern as the guide for alignment. The key to success is the combination of the neutralization of a bottom surface and the introduction of a two-dimensional hydrophilic guiding pattern, which leads...
In this study, we have investigated the effects of Ti buffer layer for the fabrication of MgB2 crystalline film on ZnO (0001) substrate. The Ti buffer layers (thickness of 5-50 nm) and MgB2 films were deposited by molecular beam epitaxy apparatus. The MgB2/Ti bilayers were characterized by in-situ RHEED and ex-situ XRD measurements, and the superconducting properties were studied by magnetic measurements...
In this paper, a new filling process using an anisotropic epitaxial growth was proposed as the fabrication method of a super junction (SJ) MOSFET. The anisotropic growth controlled with silicon (Si) and chlorine (Cl) source gases was applied to filling of the high-aspect-ratio trenches without voids. Using the process we succeeded in filling trenches with aspect ratio of 18, which is the highest aspect...
Under 100V breakdown voltage, a new device structure is required for the purpose of reducing on-resistance and for high reliability. In this study, it was demonstrated that the Si limit of on-resistance was broken by super 3D MOSFET structure that we had already proposed in an actual prototype fabrication. Its on-resistance was 16.4mOmegamiddotmm2 at the breakdown voltage of 58V. Moreover, it was...
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