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This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance. The SJ-FINFET with n/p-drift region pillar thickness (SOI...
We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model is implemented without iterative loops, and includes physical modeling of the moderate inversion region and all small-geometry effects without relying on the traditional threshold-voltage-based formulation. The new model is verified for a 90 nm node process (40...
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