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For sensing short wavelength infrared (SWIR) region (1.0-2.5 mum), photodiodes with In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structure grown on InP substrate by solid source molecular beam epitaxy (MBE), were successfully fabricated. Low dark current was obtained by improving GaAsSb crystalline quality.
We investigated the effects of growth temperature and As/III flux ratio on thick InGaAsN layers lattice-matched to InP substrates. We found that surface morphology and crystalline quality can be improved by growing at temperature higher than 480degC. By optimizing the As/III flux ratio, we successfully obtained the InGaAsN layer with PL wavelength as long as 2.03 mum at room temperature.
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