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A high performance embedded computing module was enabled and demonstrated with the implementation of a 3D Si interposer. The interposer contained front and backside multilevel metallization (MLM) with through-Si vias (TSVs) on 150mm wafers. The front-side MLM (5 levels) was fabricated with a dual damascene process. Four 2 um thick Cu routing layers with 2 um oxide dielectric layers and one pad layer...
Silicon interposers enable advanced package architectures through the integration of multiple die and passive components onto a single silicon substrate, while offering high interconnect density and low thermal expansion mismatch. This paper will describe the processing and characterization of copper-filled through silicon vias (TSVs) for Si interposers and related three-dimensional wafer-level packaging...
Two 3D Si interposer demonstration vehicles containing through-Si vias (TSVs) were successfully fabricated using integration of two different TSV formation and multilevel metallization (MLM) process modules. The first Si interposer vehicles were made with a dual damascene frontside MLM (5 levels), backside TSV (unfilled, vias-last), and backside metallization (2 levels) process sequence on standard...
In this work the physical and electrical properties of metal-insulator-semiconductor devices using an electrografted insulator were characterized, including breakdown voltage, flat band capacitance and effective trap density and compared with reference thermal oxide layers. In addition, direct Cu plating on ALD barrier and seed layer into high aspect ratio TSVs was demonstrated and characterized....
Silicon interposers with through-silicon vias (TSVs) will enable further miniaturization and reduction in power consumption for future electronic systems. The design and method of integration of the TSVs can have a significant effect on the interposer process complexity, yield, and reliability. This paper will compare two different process approaches for Si interposer fabrication. In one approach,...
The through-silicon via is a key element in the development of 3D integration technology for new generations of advanced electronic systems. There are several challenges associated with filling these deep, relatively large diameter vias using standard copper electroplating processes, like those common in damascene technology. This paper will summarize a process development for copper electroplating...
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