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Recently, silicon-based ultrashallow junction p+n photodiodes fabricated by pure boron CVD technology (Pure-Bdiodes)[1][2][3] were evaluated for detection in the Extreme Ultra-Violet (EUV) spectral range spanning from 3 nm to 15 nm. A near-theoretical responsivity (0.265 A/W) [4][5] has been achieved at a wavelength of 13.5 nm [3], which is the operating wavelength of the next-generation lithography...
In industrial applications based on extreme-ultraviolet (EUV) radiation, a periodic cleaning of the surface of the used EUV photodetectors is required to prevent the build up of carbon contaminating layers [1][2][3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation EUV lithography [4]. One way to do this is to use aggressive gasses, such as hydrogen...
Ultrashallow Si p+n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical...
Recently, silicon ultrashallow p+ n photodiodes, fabricated by a pure boron deposition technology (B-layer diodes), were evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. Superior sensitivity in the order of 0.1 A/W in the whole VUV spectral range was reported [1]. Next to the...
Silicon-based p+n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p+ active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and...
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