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A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness...
A new integrated methodology for the accurate extraction of source/drain (S/D) series resistance components with emphasis on the spreading and contact resistance elements is presented. For the first time, detailed extractions of lateral extension doping abruptness and silicide specific contact resistance are made directly from 90nm-node SOI MOSFET characterization. The spreading resistance due to...
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