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CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSix and TiN were applied to nFETs and pFETs, respectively. TiN/HfO2 damascene gate stacks and epitaxial SiGe source/drains were successfully integrated for the first time. As a result, drive currents of 1050 and 710 muA/mum at Vdd=l V, Ioff=100 nA/um and Tinv=1.6...
We have developed a high performance pMOSFET with ALD-TiN/HfO2 gate stacks on (110) substrate using gate last process at low temperature. High work function and low gate leakage current are obtained. An extremely high mobility equivalent to P+poly-Si/SiO2 on (110) substrate (171 cm2/Vs at 0.5 MV/cm) is achieved with ALD-TiN/HfO2 on (110) substrate in the thinner Tinv region of 1.7 nm. Vth roll-off...
Sub-1nm EOT and high electron mobility were realized at the same time with HfSix/HfO2 gate stacks. It was revealed that there exist two mobility degradation modes depending on the HfO2 thickness and the HfSix composition. One is the crystallization in the thick HfO2 case (Tinv > 1.6 nm). The other is the Hf penetration into the interfacial layer with the Si substrate (bottom-IFL) in the thin HfO...
We have developed a dual metal gate CMOS technology with HfSix for nMOS and Ru for pMOS on HfO2 gate dielectric. These gate stacks show high mobility (100% of universal mobility for electron, 80% for hole at high fields) down to Tinv of 1.7 nm and symmetrical low Vt equivalent to poly-Si/SiO2. As a result, high drive currents of 780 muA/mum and 265 muA/mum at Ioff = 1 nA/mum are achieved for Vdd...
We developed a less layout-dependent epitaxially grown SiGe (eSiGe) source/drain (S/D) technique for pFET. We found that the effective stressor region of eSiGe existed only near the channel and that the volume effect of eSiGe was small. On the basis of this mechanism, a new recess RIE and a new epitaxial growth technology were developed, so that the gate-pitch dependence, S/D length dependence and...
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