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We have developed a hybrid-type temperature sensor using n-type low-temperature processed poly-Si thin-film transistors. The advantages of the hybrid-type temperature sensor are that the large temperature dependence of the off-leakage current can be utilized, and simultaneously only a digital circuit is required to count the digital pulse.
Rare metal free SnO2 / Al2O3 thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using mixed SnO2 / Al2O3 powder target. The transmittance of the SnO2 / Al2O3 film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the SnO2 / Al2...
We have developed neuron MOS devices using TFTs. We fabricated and evaluated neuron MOS inverter, which can be also utilized as a variable threshold voltage inverter, and neuron MOS source follower, which can be also utilized as a digital-analog converter. The neuron MOS devices indicate that TFTs have great potential for application to artificial neural networks.
We have evaluated characteristic deviation and characteristic degradation of poly-Si thin-film phototransistors. We found that the characteristic deviation is not negligible, which seems due to energy distribution of excimer-laser crystallization, and must be compensated for some applications. We found that the characteristic degradation is negligible, which is convenient for abovementioned applications.
We fabricated a p-type poly-Si thin-film transistor with Hall terminals and evaluated the Hall voltage by applying gate voltage, drain voltage, and magnetic field. We found that the Hall voltage is dependent on the magnetic field when the gate voltage is beyond a threshold voltage.
We have developed light irradiation and applied voltage history sensors using amorphous In-Ga-Zn-O (oc-IGZO) thin-film transistor (TFTs) exposed to ozone annealing and fabricated under high oxygen pressure. These a-IGZO TFTs have an interesting property; the Ids-Vgs characteristic shifts positively and becomes steep when gate voltage is applied whereas it recover the initial one with a small threshold...
Defects in crystalline InGaZnO4 (IGZO) powder sample induced by plasma were evaluated with comparing the defects in pure constituent materials of In2O3, Ga2O3 and ZnO induced by plasma. ESR signals in IGZO observed at g = 1.939 (signal A) and g = 2.003 (signal B) were different from the g factors observed at g = 1.969 in Ga2O3 and at g = 1.957 in ZnO. Intensity of the ESR signal B was decreased with...
We have evaluated temperature dependences of transistor characteristics in n-type, p-type, and pin-type poly-Si TFTs for temperature sensor application. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents, which are the same results as what were previously reported. Moreover, the temperature dependence...
Low temperature TFT was fabricated on SiOx insulator film deposited with novel line shaped plasma source, namely, facing electrodes CVD (FE-CVD). The plasma was generated with magnetic field and RF power source applied to the two facing SiO2 targets. The insulating film was deposited with mixture of tetramethylsilane and oxygen as source gases at high deposition rate at 11.6 nm/min. Insulating properties...
We have evaluated photoconductivities in diode connections using n-ch, p-ch, and pin-ch poly-Si TFTs for photosensor application. It is found that the photoconductivities increase as the illuminance increases for all the TFTs, but they do not change so much as the applied voltage changes. Moreover, the photoconductivities are: p-ch TFT < pin-ch TFT with the gate terminal to the p-type region <...
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
Artificial muscles employing soft actuators are recently promising for many applications, and ionic polymer-metal composites (IPMCs) are particularly remarkable. In this research, we have developed soft actuators using IPMCs driven with ionic liquid. It is expected that the bending ability continues for a long time regardless of the atmospheric humidity because of the non-volatileness.
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the output pulse became degraded for the 3-input NAND circuit. Moreover, we have fabricated a set-reset flip-flop (SR-FF) circuit using the 2-input NAND circuits and confirmed that the SR-FF circuit operated correctly.
We have developed maximum and minimum voltage sample and hold circuits employing operational amplifiers (OPAMPs) composed of polycrystalline silicon (poly-Si) thin-film transistors (TFTs). It was confirmed that the maximum and minimum voltages are successfully sampled and held. It was also confirmed that the restoring ratio has a peak near a certain value of the operation frequency. We would like...
We have evaluated an artificial retina using thin-film devices driven by wireless power supply. It is found that the illumination profile can be correctly detected as the output voltage profile even if it is driven using unstable wireless power supply. Particularly in this presentation, we confirm correct working of pattern recognition.
Insulating SiO x film was deposited with newly developed plasma source at low temperature for fabrication of flexible devices on plastic substrate. The plasma was generated with electromagnetic field by two facing electrodes including magnets inside and covered with SiO 2 targets. The higher deposition rate was achieved from 2.0 to 33 nm/min, with the mixture of tetramethylsilane and...
We have developed a hybrid-type temperature sensor using thin-film transistors. First, we evaluate temperature dependences of transistor characteristics and find that the temperature dependence of the off-leakage current is much larger than that of the on current. Next, we combine a transistor, capacitor, and ring oscillator to develop the hybrid-type temperature sensor and detect the temperature...
2D and 3D distributions of magnetic field (B) are detected by moving a poly-Si micro Hall device. First, we confirm that the Hall voltage (VH) is linearly dependent on B. Next, we move the poly-Si micro Hall device in B and measure VH. The distributions of VH are similar to those of B. Therefore, we can detect the 2D and 3D distributions of B by measuring those of VH. This predicts that we can realize...
Artificial retinas have been ardently desired to recover the sight sense for sight-handicapped patients. In our study, we have proposed an artificial retina using poly-Si TFTs. In this presentation, the real-time detection is confirmed. It is found that the response time is less than sub-second, which is sufficiently fast for application of artificial retinas.
The characteristic deviation of excimer-laser crystallized (ELC) poly-Si thin-film transistors (TFTs) with wide channel is compared between TFTs with channel regions parallel to laser shots (parallel TFTs) and TFTs with channel regions perpendicular to laser shots (perpendicular TFTs). It is found that the characteristic deviation is smaller for perpendicular TFTs. Moreover, layout design of operational...
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