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We confirmed that photo-induced current in off region changes when we irradiate infrared light to N-type, P-type and PIN-type low-temperature poly-Si TFTs. In addition, we found that the photo-induced current is proportional to the gate width, whereas it does not depend on the gate length. We can indicate that it is possible to detect infrared light above certain intensity from the relationship between...
Low temperature TFT was fabricated on SiOx insulator film deposited with novel line shaped plasma source, namely, facing electrodes CVD (FE-CVD). The plasma was generated with magnetic field and RF power source applied to the two facing SiO2 targets. The insulating film was deposited with mixture of tetramethylsilane and oxygen as source gases at high deposition rate at 11.6 nm/min. Insulating properties...
Trap densities in the channel layers of ZnO thin-film transistors have been extracted. First, the low-frequency (low-f) capacitance–voltage – characteristics are measured using the customized measurement system. Next, the surface potential is calculated from the low-f – characteristic, and the surface potential gradient is calculated by applying Gauss's law. Finally, the spatial profile...
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