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The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron-phonon energy loss rate in the same material over an identical temperature range.
An electron cooling junction using platinum silicide as a superconductor contact is demonstrated for the first time. The junction shows encouraging electrical characteristics and a fit to a standard cooling model predicts cooling from 100 mK to 50 mK for a test device. Silicides have been widely used in the semiconductor industry because of their reliability and reduced contact resistance; hence this...
Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have different etch resistance. The structures are aligned to avoid etch-resistive planes in making the suspended...
A silicon-superconductor tunnel junction is capable of cooling electrons from a temperature of 300 mK to 150 mK and below when a current is passed through it and may also be used as the thermometer in a silicon “cold electron bolometer”. Recent work on these novel devices is described here.
In this review, we address the extent to which stream ecology has contributed to biodiversity‐ecosystem function (BEF) theory and empirical testing. BEF research first targeted the implications of the ongoing loss of biodiversity for ecosystems and humans. Terrestrial ecology has played a leading role in this field, whereas the contribution of riverine science to the debate has been more limited....
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