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In this work, we demonstrate a way to modulate threshold voltage of InGaAs Fin-structured High-electron-mobility transistors (Fin-HEMTs) by narrowing fin width of the devices. Normally-off InGaAs FinHEMT has been successfully achieved when fin width of devices is smaller than around 180 nm. Also, we introduce a theory to explain side wall gates control of FinHEMTs to modulate threshold voltage.
Free-standing thin-film flexible Si1−xGex saturable absorber with Si/Ge composition-ratio dependent saturable absorbance is demonstrated to passively mode-lock the erbium-doped fiber laser for delivering a pulsewidth of 330 fs at a modulation depth of 16%.
For the decoupled dual-mass silicon Micromachined gyroscope developed by Southeast University, drive mode and sense mode are analyzed. In order to improve the precision of silicon Micromachined gyroscope, the demodulation algorithm based on synchronous integrator circuit for gyroscope digital control system is proposed. Combining with Automatic Gain Control (AGC) and Phase-Locked Loop (PLL) technology,...
An experimental method is proposed to extract the channel hot-electron (CHE) energy (φe) in the nano-meter-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs). Accelerated by localized electric field in the drain induced channel depletion region, the CHEs obtain larger kinetic energy than the other unaccelerated channel electrons, and they gain greater probability of tunneling through...
Potential well engineering is proposed for NAND Flash memory. With a variable (~2nm-4.3nm) tunnel barrier, the engineered well (EW) enhances tunneling of carriers during program/erase (P/E) to result in fast P/E, while it suppresses charge loss under the retention mode to result in good data retention. The EW also improves endurance, as it is insensitive to the P/E stress induced tunnel barrier degradation...
We propose a 4×2 encoder based on two dimensional triangular lattice photonic crystals composed of cylindrical silicon rods. The main structure of the device is a combination of both line defect Y branch and coupler waveguides. The simulation results confirm the proposed optical logic device can show their capabilities‥
The diameter and distribution measurements of nanoparticles on wafers are critical parameters in the semiconductor industry to ensure the quality of the transistors and increase the production rate. A goniometric optical scatter instrument has been developed at CMS / ITRI to readily perform polarized light scattering measurements for the diameter and distribution measurements of nanoparticles on wafers...
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