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The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while still achieving an extremely low off-state leakage (Ioff) at ∼10−21A (zA) level. Attributed to DOSRAM performance improvement, 100MHz normally-off (Noff)...
The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while still achieving an extremely low off-state leakage (Ioff) at ∼10−21A (zA) level. Attributed to DOSRAM performance improvement, 100MHz normally-off (Noff)...
This paper presents a comparative study of three multi-function three-phase inverters, which include three-phase three-wire full-bridge (FB) inverter, three-phase four-wire half-bridge (HB) inverter and neutral-point-clamped (NPC) inverter. Each inverter is controlled by the division-summation (D-Σ) digital control and the control law for each inverter is derived in short. The comparison among these...
We successfully developed and verified a complete compact model solution for layout dependent effect (LDE) of FinFET technology. LDE has significant impact on the device performances mainly due to the application of stressors and aggressive device scaling. With LDE, performance degradation may be up to 10% or more. In this work, compact model solution for Length of Oxidation (LOD), Well Proximity...
This paper studies how boron thermal diffusion in SiGe heterostructure are influenced by different source drain extension high-energy fluorine implant after SiGe thermal process for advanced HKMG SRAM device. Different fluorine profiles may introduce different fluorine concentration along Si/SiGe interface and result in fluorine interstitial cluster at different SiGe positions after SiGe 700°C thermal...
Beyond 65nm node, pattern loading effect (PLE) in conventional RTP (front-side heating) has been emerged as a major yield killer. Different pattern and deposited film property strongly influence thermal absorption and emission at the integration stage of the spike anneal (e.g., STI, poly, and nitride spacers) lead to significant temperature differences across each die. Several methods for reducing...
This paper for the first time reports on a novel “local” charge balanced trench-based super junction transistor. The local charge balance is achieved by selectively growing thin highly-doped n-type and p-type layers in a deep trench structure. The final charge-balanced trench structure is finished with an oxide-sealed airgap. Devices rated at 10A with Vbd=730V and a Ron=23 mΩ.cm2 are demonstrated.
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