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This paper proposes an Active Gate Current Control (AGCC) strategy for non-insulating gate WBG devices, for example, gallium nitride gate-injection-transistor (GaN-GIT) and silicon carbide super junction transistor (SiC-SJT). It provides a tool for power converter designers to further improve the converter efficiency and to extend the life time of those higher cost power transistors. By continuously...
The emerging 650 V large current rating, Enhancement-mode (E-mode) Gallium Nitride High-Electron-Mobility Transistor (GaN HEMT) is a promising device for low to medium power, high power density converters (e.g., motor drives, battery chargers), which require high robustness levels. Thus, a comprehensive study of the short circuit behavior of high power E-mode GaN HEMT is the subject of this paper...
Silicon Carbide (SiC) power devices with super-cascode structure provide a cost-effective solution for high performance medium voltage power switches. However, these SiC super-cascode devices are still in the early development stage, and limited information on the device characteristics is available. This paper presents the characterization and evaluation of a 4.5 kV, 40 A SiC super-cascode device...
This paper presents an evaluation of a newly released power stage direct drive GaN HEMT. The double pulse test is performed and the dynamic performance is characterized. PCB layout optimization is also investigated for improved switching transients. It is shown that the direct drive system provides simplified circuit design, reduced number of external components, and small gate loop parasitics. Also,...
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
The medium power rating two-level three phase voltage source inverter is among the most popular power conversion systems. The typical switching frequency of the commercial medium power rating inverter, however, is limited to tens of kHz. By increasing the switching frequency and using emerging gallium-nitride devices, the size of the overall system can be greatly reduced. This paper begins by reviewing...
This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high common-mode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions. To enhance the gate-drive power reliability, a power over fiberbased isolated power supply is designed to replace the traditional design based on isolation transformer. It delivers the gate-drive power by laser...
This paper presents a 15 kV SiC MOSFET gate drive circuit, which features high common-mode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions. To enhance the gate-drive power reliability, a power over fiber (PoF) based isolated power supply is designed to replace the traditional design based on isolation transformer. It delivers the gate-drive power by laser...
Paralleling devices is an effective way to achieve higher power applications while still having the convenience brought by discrete devices. However, very few papers investigate the challenges of paralleling Gallium Nitride high electron mobility transistors (GaN HEMTs) in cascode configuration, especially the potential failure modes and its related mechanisms. In this paper, a comprehensive study...
In this paper, we present a comprehensive evaluation of the latest 600 V class Gallium Nitride based Gate Injection Transistor (GaN-GIT) for high temperature and high efficiency applications. In this study, the Panasonic GITs are used as the reference for latest GaN-GIT technology. Static and dynamic testing was performed on the two GaN-GIT versions to extract critical static parameters and switching...
This paper presents the development of a high voltage evaluation platform to investigate both the static and switching characteristics of silicon (Si) and silicon carbide (SiC) based high voltage (HV) power devices. The test methodologies, design, implementations, and safety guidelines for the HV device evaluation are elaborated. A 15 kV rated double pulse tester is built to study the dynamic behaviors...
This paper presents a new low-power adiabatic logic structure called Clocked CMOS Adiabatic Logic (CCAL), which is based on the Clocked CMOS logic. CCAL is powered by two complementary sinusoidal supply clocks. To demonstrate the energy efficiency of CCAL, eight-inverter chain is simulated to show the energy comparison among CCAL, Quasi-Static Energy Recovery Logic (QSERL) and conventional static...
Considering the problems existing in present teaching information service system such as information acquisition with a low speed and information acquisition limited by office condition, with combinations of existing data resources, wireless application protocol and WAP push technology, this paper proposes a solution of a WAP-based teaching information service system. This system realizes some functions...
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