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Thin films of Fe have been epitaxially sputtered on GaAs substrates with native oxide removal prior to the deposition carried out by an Ar ion milling. Films grown at substrate temperatures above 100 °C show well-defined fourfold anisotropies. The onset of epitaxial growth is accompanied by an increase in the surface roughness with growth occurring in a distinct island-like pattern. The Fe layers...
In this paper, we report a novel method of multi-location cross-section sample preparation for TEM failure analysis from the same planar view TEM sample, which is a large soft fail area. With the development of semiconductor technology, the sizes of devices are smaller and smaller, and the complexity of their structures is increasing. Though a test may show that a large area including multiple devices...
As a key part of failure analysis function in semiconductor foundry industry, TEM micro-topography becomes more and more important while semiconductor devices' critical dimensions get smaller and smaller. And the FIB/TEM sample preparation technique takes the first priority to achieve high quality TEM pictures. Normally FIB operators have to avoid sample defects such as sample bending, poor thickness...
In this paper, tiny in-line defects which correlated with chip low yield were investigated. A procedure which has optimum use of FIBs with different function to prepare ultra-thin TEM sample to analyze tiny defects has been proposed, which help prepare overlap free TEM sample in tiny defect analysis process. TEM /EELS /EFTEM have been performed in tiny defect analysis. Two tiny in-line defect cases...
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