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We have successfully demonstrated ldquosilicon on thin BOXrdquo (SOTB) 6T-SRAM with a 50-nm gate. By employing an ultra low-dose channel, this SOTB achieves small Vth variability. As a result, the SOTB SRAM technology has been successfully developed with 0.142 V of static noise margin at Vdd=0.6 V and Vdd_min of 0.63 V because of its excellent Vth variability characteristics. We also show that SOTB...
We have observed net optical gain by current injections to ultra-thin Si embedded in a resonant optical cavity. The cavity consists of a dielectric waveguide fabricated by CMOS and MEMS process. The photoluminescence (PL) spectra show narrow resonances peaked at the designed wavelength, and the electroluminescence (EL) intensity increases super-linearly with currents. The comparisons with first principle...
The Silicon on Thin BOX (SOTB) has the smallest Vth variation among planar CMOS due to low-dose channel. This study focused on identifying the remaining components after reducing random-dopant fluctuation (RDF) by decreasing impurities in the channel. Improving short-channel-effect immunity and body-thickness uniformity is the key to further reducing the variation. An often mentioned phenomenon, larger...
Ultralow off-current (Ioff les 1 pA/mum) ldquosilicon on thin BOX (SOTB)rdquo CMOSFETs were fabricated in 65-nm technology. Gate-induced drain leakage (GIDL) was adequately reduced by controlling the gate-overlap length with an additional offset spacer. Small threshold-voltage (Vth) variation under a wide-range back-gate-bias (Vbg) condition and suppressed Ioff variation by Vbg control were demonstrated...
We confirmed enhanced electroluminescence by lateral carrier injections to quantum confined ultra-thin silicon. The optical intensity can be controlled by the back gate voltage, and the device operates as a light-emitting transistor.
We have demonstrated control and characterization of strain in SiGe and Ge layers on Si(001) substrates with engineered misfit dislocations at the heterointerface. X-ray microdiffraction revealed quantitatively fine structures in micrometer-sized regions of the SiGe layers. The introduction of PEDN can alter the manner of strain relaxation of SiGe on Si(001) and raise the possibility of solving problems...
The SiOx thin film with a thickness of about 1 mum was formed on a GaAs substrate by bar-coating with the organic solution of the SiOx nanoparticles (~40 nm). The as-formed SiOx thin film consists of the SiOx nanoparticles; thus the thin film is macroscopically discontinuous and is referred to as a nanoparticle thin film. Although there were no silicon (Si) nanocrystals in the as-formed SiOx nanoparticle...
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