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We have demonstrated 1200V and 3300V planar 4H-SiC MOSFET technology at our 6-inch foundry. 1200V MOSFETs demonstrate good avalanche ruggedness under single-and one million (1,000,000) repetitive unclamped inductive switching (UIS) pulse tests. 1200V MOSFETs can pass one hundred (100) 10 microsecond short-circuit events at 600V bus voltage, while 3300V MOSFETs can pass 5 microsecond short-circuit...
To research nitrile rubber O-rings' lifetime with less time and resources, and to reach a more convincing and statistic result, an accelerated degradation testing (ADT) is designed, which consists of a 90C pre-test and a step-stress test with 70 °C, 80 °C, 90 °C and 100 "C. Compression sets obtained from ADT are analyzed as degradation data, and degradation models were fitted to data using Bayesian...
This paper presents a simulation of articulated neutral section insulator in DC Railway System. With the introduction of Beijing subway structure, the special way of the connection of neutral section is proposed. By comparing and investigating the waveforms of locomotive passing neutral section current and starting current, the paper pointed out the difficulty of discrimination between remote short...
The effective approach to monitor the health state of equipment has long been a concern of industrial applications. This paper focuses on the categorical data analysis to build equipment degradation model for predicting equipment failure and monitoring the health state of equipment. Since large volumes of categorical data are generated and collected in most manufacturing execution systems, how to...
The stability of intrinsic and Al-doped single- and bilayer ZnO for thin-film CuInGaSe2 solar cells, along with Al-doped Zn1−xMgxO alloy and Sn-doped In2O3 (ITO) and F-doped SnO2, was evaluated by direct exposure to damp heat (DH) at 85°C and 85% relative humidity. The results show that the DH-induced degradation rates followed the order of Al-doped ZnO and Zn1−xMgxO ≫ ITO ≫ F:SnO2. The degradation...
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