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Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer and HfO2 gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on silicon devices, both bulk trapping and interface trapping affect the PBTI (positive bias temperature instability) characteristics of nMOSFETs...
The large negative Vfb shift by capping a thin layer of Me2O3 (Me= Gd, Y or Dy) on SiO2 and HfO2 with TaN metal gate was investigated. It was found that the negative Vfb shift is due to the dipole formation at MeSiO-SiO2 interface. The local bonding asymmetry is proposed to be the underlying reason for the dipole formation.
Using a thin germanium interfacial passivation layer (IPL), for the first time we present surface channel n- and p-MOSFETs on GaAs substrate with TaN gate electrodes and HfO2 dielectric films. We used self-aligned and gate-last processes to fabricate MOSFETs on semi-insulating GaAs substrate. The electrical results from the buried channel and the surface channel-mode transistors are investigated....
We demonstrate for the first time self-aligned, gate-first, enhancement mode n-MOSFETs with InGaAs and GaAs/InGaAs channels, Atomic Layer Deposition HfO2 gate oxide and TaN gate. Good control of the drain current was achieved due to effective passivation of the III-V-high-k interface with ultra-thin MBE in-situ grown a-Si layer. High transconductance and electron channel mobility along with negligible...
To overcome the issues of mobility degradation and charge trapping in the high-k MOSFET, a stacked Y2O3 (top)/HfO2 (bottom) multi-metal gate dielectric with TaN gate has been developed. Compared to the HfO2 reference, the new dielectric shows similar scalability, but superior device performance and reliability characteristics. Channel mobility, fast transient charge trapping, bias temperature instability,...
A structural approach of fabricating laminated Dy2O3-incorporated HfO2 multimetal oxide dielectric has been developed for high-performance CMOS applications. Top Dy2O3 laminated HfO2 bilayer structure shows the thinnest equivalent oxide thickness (EOT) with a reduced leakage current compared to HfO2. This structure shows a great advantage for the EOT scaling CMOS technology. Excellent electrical performances...
New structural approach of Gd2O3 incorporated HfO2 multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd2O3 with bottom HfO2 bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd2O 3/HfO2 dielectric result in ultra-thin regime of EOT (between 5Aring...
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