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Since higher performance of semiconductor devices is required, all of the semiconductor wafer manufacturers make their effort into device size reduction. However, in the latest semiconductor device, only the size reduction is not sufficient to achieve the requirement. The carrier mobility is essential to be improved. The semiconductor manufacturers, especially wet cleaning process people, try to optimize...
High performance Ni-FUSI/HfSiON CMIS with suitable Vth in a wide Lg range is presented. This is accomplished by ion implantation to substrate and phase control of Ni-FUSI gate. Threshold voltage of NiSi-FUSI NMIS is controlled by nitrogen implantation, and that of Ni2Si-FUSI PMIS is controlled by fluorine implantation. It is demonstrated that N/F incorporation can realize 0.2-V-low |Vth|, high carrier...
F incorporation into HfSiON dielectric using channel implantation technique is shown to be highly effective in lowering Vth and improving NBTI in poly-Si gate pFET. Mobility degradation is not accompanied and drive current is increased by 180%. From analytical and electrical characterization, the Vth shift is attributed to change in trap density
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